TYPE-I/TYPE-II TRANSITION IN INGAALAS/INP MULTIPLE-QUANTUM-WELL STRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：16

作者：

KAWAMURA, Y

KOBAYASHI, H

IWAMURA, H

机构：

[1] NTT Optc-electronics Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 1B期

关键词：

INGAALAS/INP MQWS; TYPE I SUPERLATTICES; TYPE II SUPERLATTICES; GS-MBE;

D O I：

10.1143/JJAP.33.L79

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In0.52Ga0.48-yAlyAs/InP multiple quantum well (MQW) structures are grown by gas source molecular beam epitaxy (GS-MBE). It is found that a transition from type I to type II structure occurs at an Al composiaon (y) of 0.18, accompanied by a drastic change of optical and electrical properties. The y dependence of the effective band gap of the InGaAlAs/InP MQW layers agrees well with the calculated result.

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收藏

页码：L79 / L82

页数：4

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