STAGGERED-LINEUP HETEROJUNCTIONS AS SOURCES OF TUNABLE BELOW-GAP RADIATION - OPERATING PRINCIPLE AND SEMICONDUCTOR SELECTION

被引：78

作者：

KROEMER, H

GRIFFITHS, G

机构：

来源：

关键词：

D O I：

10.1109/EDL.1983.25631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：20 / 22

页数：3

共 13 条

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[3] DOHLER, 1972, PHYS STAT SOLIDI B, V52, P79
[4] Flugge S., 1974, PRACTICAL QUANTUM ME, P101
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FRENSLEY, WR
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[9] CORRELATION FOR III-V SEMICONDUCTORS AND II-VI-SEMICONDUCTORS OF AU SCHOTTKY-BARRIER ENERGY WITH ANION ELECTRONEGATIVITY
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[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (01) : 56 - 58
[10] ELECTRONIC-STRUCTURE OF GAASXP1-X/GAP STRAINED-LAYER SUPER-LATTICES WITH X-LESS-THAN-0.5
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 469 - 472