IMPROVEMENT OF DIELECTRIC STRENGTH OF TRENCH CAPACITORS BY USING RAPIDLY GROWN SIO2-FILMS

被引：4

作者：

ARAKAWA, T

FUKUDA, H

OKABE, Y

IWABUCHI, T

OHNO, S

机构：

[1] Semiconductor Technology Laboratory, Oki Electric Industry Company, Limited, Hachioji

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 05期

关键词：

Dielectric Strength - High Temperature Oxidation - Rapid Thermal Processing - Trench Capacitors;

D O I：

10.1149/1.2086746

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：1650 / 1652

页数：3

共 6 条

[1] RIE CONTAMINATION OF ETCHED SILICON SURFACES [J].

EPHRATH, LM ;

BENNETT, RS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1822-1826

[2] THE DIELECTRIC RELIABILITY OF VERY THIN SIO2-FILMS GROWN BY RAPID THERMAL-PROCESSING [J].

FUKUDA, H ;

IWABUCHI, T ;

OHNO, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2164-L2167

[3] A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES [J].

IRENE, EA ;

TIERNEY, E ;

ANGILELLO, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2594-2597

[4] A STUDY OF CCIF3/H2 REACTIVE ION ETCHING DAMAGE AND CONTAMINATION EFFECTS IN SILICON [J].

MU, XC ;

FONASH, SJ ;

OEHRLEIN, GS ;

CHAKRAVARTI, SN ;

PARKS, C ;

KELLER, J .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2958-2967

[5] NONPLANAR OXIDATION AND REDUCTION OF OXIDE LEAKAGE CURRENTS AT SILICON CORNERS BY ROUNDING-OFF OXIDATION [J].

YAMABE, K ;

IMAI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1681-1687

[6]

[No title captured]

← 1 →