A STUDY OF CCIF3/H2 REACTIVE ION ETCHING DAMAGE AND CONTAMINATION EFFECTS IN SILICON

被引：51

作者：

MU, XC

FONASH, SJ

OEHRLEIN, GS

CHAKRAVARTI, SN

PARKS, C

KELLER, J

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.336934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2958 / 2967

页数：10

共 27 条

[1] MODIFICATION OF SCHOTTKY BARRIERS IN SILICON BY REACTIVE ION ETCHING WITH NF3 [J].

ASHOK, S ;

CHOW, TP ;

BALIGA, BJ .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :687-689

[2] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[3]

BENNETT RS, 1982, EL SOC EXT ABSTR, V82, P283

[4]

Chu W. K., 1978, BACKSCATTERING SPECT

[5] GROWTH AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE CONTACTS ON DRY-ETCHED SILICON SURFACES [J].

CLIMENT, A ;

FONASH, SJ .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1063-1069

[6]

CLIMENT A, 1984, P MRC S THIN FILMS I, V25, P613

[7]

DANNOIS A, 1978, PHYS REV, V183, P1824

[8]

EPHRATH LM, 1981, SOLID STATE TECHNOL, V24, P183

[9] SURFACE SCATTERING FROM W-SINGLE CRYSTALS BY MEV HE+ IONS [J].

FELDMAN, LC ;

KAUFFMAN, RL ;

SILVERMAN, PJ ;

ZUHR, RA ;

BARRETT, JH .

PHYSICAL REVIEW LETTERS, 1977, 39 (01) :38-41

[10] SILICON DAMAGE CAUSED BY CCL4 REACTIVE ION ETCHING - ITS CHARACTERIZATION AND REMOVAL BY RAPID THERMAL ANNEALING [J].

FONASH, SJ ;

SINGH, R ;

ROHATGI, A ;

RAICHOUDHURY, P ;

CAPLAN, PJ ;

POINDEXTER, EH .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :862-866

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