A STUDY OF CCIF3/H2 REACTIVE ION ETCHING DAMAGE AND CONTAMINATION EFFECTS IN SILICON

被引：51

作者：

MU, XC

FONASH, SJ

OEHRLEIN, GS

CHAKRAVARTI, SN

PARKS, C

KELLER, J

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.336934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2958 / 2967

页数：10

共 27 条

[21]

RANSOM CM, 1983, 4TH P S PLASM PROC, P93

[22] ELECTRICAL, STRUCTURAL, AND BONDING CHANGES INDUCED IN SILICON BY H, AR, AND KR ION-BEAM ETCHING [J].

SINGH, R ;

FONASH, SJ ;

ASHOK, S ;

CAPLAN, PJ ;

SHAPPIRIO, J ;

HAGEALI, M ;

PONPON, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :334-336

[23]

SINGH R, 1983, IEEE ELECTRON DEVICE, V4, P432

[24] THERMAL-DECOMPOSITION OF NICKEL CARBIDE - AUGER LINESHAPE STUDY [J].

SMITH, MA ;

SINHAROY, S ;

LEVENSON, LL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :462-465

[25]

SUGERMAN A, COMMUNICATION

[26]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[27]

1960, XRAY POWDER DATA FIL

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