ELECTRICAL, STRUCTURAL, AND BONDING CHANGES INDUCED IN SILICON BY H, AR, AND KR ION-BEAM ETCHING

被引：55

作者：

SINGH, R

FONASH, SJ

ASHOK, S

CAPLAN, PJ

SHAPPIRIO, J

HAGEALI, M

PONPON, J

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.572127

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：334 / 336

页数：3

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共 8 条

[1] INVESTIGATIONS ON DAMAGE CAUSED BY ION ETCHING OF SIO2 LAYERS AT LOW-ENERGY AND HIGH DOSE
DEPPE, HR
HASLER, B
HOPFNER, J
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 51 - 55
[2] EFFECT OF ION-BEAM SPUTTER DAMAGE ON SCHOTTKY-BARRIER FORMATION IN SILICON
FONASH, SJ
ASHOK, S
SINGH, R
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (05) : 423 - 425
[3] SOME TRENDS IN PREPARING FILM STRUCTURES BY ION-BEAM METHODS
GAUTHERIN, G
WEISSMANTEL, C
[J]. THIN SOLID FILMS, 1978, 50 (MAY) : 135 - 144
[4] HARBLE K, 1979, THIN SOLID FILMS, V61, P105
[5] RADIATION-INDUCED TRIVALENT SILICON DEFECT BUILDUP AT THE SI-SIO2 INTERFACE IN MOS STRUCTURES
LENAHAN, PM
BROWER, KL
DRESSENDORFER, PV
JOHNSON, WC
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4105 - 4106
[6] LOVE VE, 1981, SOLAR ENERGY MAT, V4, P113
[7] DIFFUSION-BARRIERS IN LAYERED CONTACT STRUCTURES
NICOLET, MA
BARTUR, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 786 - 793
[8] PASSIVATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
SEAGER, CH
GINLEY, DS
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (05) : 337 - 340