NONPLANAR OXIDATION AND REDUCTION OF OXIDE LEAKAGE CURRENTS AT SILICON CORNERS BY ROUNDING-OFF OXIDATION

被引：73

作者：

YAMABE, K

IMAI, K

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1987.23137

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1681 / 1687

页数：7

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