LOCALIZED MODE MEASUREMENTS OF BORON- AND LITHIUM-DOPED SILICON

被引：32

作者：

SPITZER, WG

WALDNER, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 08期

关键词：

D O I：

10.1063/1.1714509

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2450 / &

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