THE EFFECT OF ANNEALING ON THE DEFECT STRUCTURE AND ELECTRICAL-PROPERTIES OF DEFORMED SINGLE-CRYSTALS OF GE

被引：8

作者：

ARISTOV, VV

OSIPYAN, YA

SCHOLZ, R

SNIGHIREVA, II

KHODOS, II

SHEVCHENKO, SA

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 79卷 / 01期

关键词：

D O I：

10.1002/pssa.2210790103

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：47 / 55

页数：9

共 24 条

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