EFFECTS OF SUBSTRATE-TEMPERATURE ON THE ORIENTATION OF ULTRAHIGH-VACUUM EVAPORATE SI AND GE FILMS

被引：17

作者：

CHAO, SS ^{[1
]}

GONZALEZHERNANDEZ, J ^{[1
]}

MARTIN, D ^{[1
]}

TSU, R ^{[1
]}

机构：

[1] INST FIS & QUIM SAO CARLOS,BR-13560 SAO CARLOS,SP,BRAZIL

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 11期

关键词：

D O I：

10.1063/1.95771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1089 / 1091

页数：3

共 14 条

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[9] LOW-TEMPERATURE FORMATION OF POLYCRYSTALLINE SILICON FILMS BY MOLECULAR-BEAM DEPOSITION [J].

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