SINGLE TRANSISTOR STATIC MEMORY CELL - CIRCUIT APPLICATION OF A NEW QUANTUM TRANSISTOR

被引：6

作者：

CHEN, J

YANG, CH

WILSON, RA

WOOD, CEC

机构：

[1] Electrical Engineering Department, University of Maryland, College Park

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 01期

关键词：

D O I：

10.1063/1.108784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An experimental realization and application of a new quantum transistor is reported herein. The conduction mechanism is a resonant-tunneling process between regions of two-dimensional density of states. As a result, the transistor displays new current-voltage characteristics. A static memory cell using a single transistor is demonstrated.

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页码：96 / 98

页数：3

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