FAR-INFRARED PHOTO-HALL EXPERIMENTS ON GAAS-SI

[11] RYAN JF, 1988, 19TH INT C PHYS SEM

[12] SEEGER K, 1985, SEMICONDUCTOR PHYSIC, P52

[13] Shklovskii B.I., 1984, ELECT PROPERTIES DOP, P74

[14] SIDOROV VI, 1966, FIZ TVERD TELA+, V8, P2000

[15] ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS [J]. THIN SOLID FILMS, 1976, 31 (1-2) : 69 - 88

[16] Van der Pauw L.J., 1958, PHILIPS RES REP, V13, P1

[17] ELECTRON-MOBILITY AND FREE-CARRIER ABSORPTION IN GAAS - DETERMINATION OF THE COMPENSATION RATIO [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 899 - 908

[11] RYAN JF, 1988, 19TH INT C PHYS SEM

[12] SEEGER K, 1985, SEMICONDUCTOR PHYSIC, P52

[13] Shklovskii B.I., 1984, ELECT PROPERTIES DOP, P74

[14] SIDOROV VI, 1966, FIZ TVERD TELA+, V8, P2000

[15] ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS [J]. THIN SOLID FILMS, 1976, 31 (1-2) : 69 - 88

[16] Van der Pauw L.J., 1958, PHILIPS RES REP, V13, P1

[17] ELECTRON-MOBILITY AND FREE-CARRIER ABSORPTION IN GAAS - DETERMINATION OF THE COMPENSATION RATIO [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 899 - 908