DIFFUSION AND INCORPORATION OF ALUMINUM IN SILICON

被引：10

作者：

RAICHOUDHURY, P ^{[1
]}

SELIM, FA ^{[1
]}

TAKEI, WJ ^{[1
]}

机构：

[1] WESTINGHOUSE ELECT CORP,RES LABS,PITTSBURGH,PA 15235

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 05期

关键词：

D O I：

10.1149/1.2133402

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：762 / 766

页数：5

共 10 条

[1] DIFFUSION OF DONOR AND ACCEPTOR ELEMENTS IN SILICON [J].

FULLER, CS ;

DITZENBERGER, JA .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (05) :544-553

[2] REACTIONS OF GROUP-III ACCEPTORS WITH OXYGEN IN SILICON CRYSTALS [J].

FULLER, CS ;

DOLEIDEN, FH ;

WOLFSTIRN, K .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (3-4) :187-203

[3]

FULLER CS, 1958, J APPL PHYS, V28, P1264

[4]

GOLDSTEIN B, 1956, B AM PHYS SOC, V1, P145

[5]

KAO YC, 1967, ELECTROCHEM TECHNOL, V5, P90

[6]

KROGER FA, 1973, CHEMISTRY IMPERFECT, V2, P11

[7] DIFFUSION OF ALUMINUM IN SINGLE CRYSTAL SILICON [J].

MILLER, RC ;

SAVAGE, A .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (12) :1430-1432

[8]

Pavlov P. V., 1974, Soviet Physics - Solid State, V16, P1

[9]

SPENKE E, 1969, SEMICONDUCTOR SILICO, P15

[10]

1971, NSRDSNBS37

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