GAMMA-RAYS IRRADIATION - AN EFFECTIVE METHOD FOR IMPROVING LIGHT-EMISSION STABILITY OF POROUS SILICON

被引：27

作者：

FU, JS ^{[1
]}

MAO, JC ^{[1
]}

WU, E ^{[1
]}

JIA, YQ ^{[1
]}

ZHANG, BR ^{[1
]}

ZHANG, LZ ^{[1
]}

QIN, GG ^{[1
]}

WUI, GS ^{[1
]}

ZHANG, YH ^{[1
]}

机构：

[1] BEIJING UNIV,DEPT TECH PHYS,BEIJING 100871,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 13期

关键词：

D O I：

10.1063/1.110677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a study on gamma irradiated porous Si. The electron paramagnetic resonance study on porous Si irradiated by gamma rays shows that the observed signals come from an intrinsic defect, a Si dangling bond, at the interface of Si/SiO(x) in porous Si. The photoluminescence measurements show that the gamma irradiation not only increases the intensity of the photoluminescence but also greatly improves its stability. The spectra of the Fourier transform infrared absorption show that the gamma irradiation is an effective method for accelerating oxidation of porous Si. All experimental results can be explained by the increase of the oxidation layer thickness which decreases the nonradiative recombination probability of electron-hole pairs.

引用

页码：1830 / 1832

页数：3

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