NUMERICAL-SIMULATION OF TRANSIENT-RESPONSE AND RESONANT-TUNNELING CHARACTERISTICS OF DOUBLE-BARRIER SEMICONDUCTOR STRUCTURES AS A FUNCTION OF EXPERIMENTAL PARAMETERS

被引：39

作者：

JENSEN, KL

BUOT, FA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 12期

关键词：

D O I：

10.1063/1.343120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5248 / 5250

页数：3

共 12 条

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