CAPACITANCE OF A CIRCULAR SYMMETRICAL MODEL OF A VIA HOLE INCLUDING FINITE GROUND PLANE THICKNESS

被引：54

作者：

KOK, P

DEZUTTER, D

机构：

[1] Laboratory for Electromagnetism and Acoustics, University of Ghent, 9000, Ghent

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1991年 / 39卷 / 07期

关键词：

D O I：

10.1109/22.85393

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The capacitance of a simplified model of a via hole is calculated based on an integral equation approach for the surface charge density. The finite ground plane thickness is explicitly taken into account. Numerical data are obtained for a large range of realistic geometrical data. The relative importance of the contribution to the total capacitance coming from the ground plane opening is explicitly evaluated. It is found that the via capacitance is proportional to the square root of its height, at least for the range of geometrical data considered in this paper.

引用

页码：1229 / 1234

页数：6

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[2]

DURAND E, 1966, ELECTROSTATIQUE, V2, P368

[3]

GRADSHTEYN IS, 1965, TABLE INTEGRALS SERI, P904

[4]

ITOH T, 1989, NUMERICAL TECHNIQUE