HIGH-TEMPERATURE PROCESS LIMITATION ON TISI2

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 141 - 149

[2] AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2240 - 2245

[3] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[4] LAU CK, 1983, ECS DIG EXT ABSTR, V83, P569

[5] MO/TI BILAYER METALLIZATION FOR A SELF-ALIGNED TISI2 PROCESS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 259 - 263

[6] INTERACTION BETWEEN TI AND SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2934 - 2938

[7] TING CY, 1982, ELECTROCHEMICAL SOC, P213

[8] WONG CY, UNPUB J APPL PHYS

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 141 - 149

[2] AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2240 - 2245

[3] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[4] LAU CK, 1983, ECS DIG EXT ABSTR, V83, P569

[5] MO/TI BILAYER METALLIZATION FOR A SELF-ALIGNED TISI2 PROCESS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 259 - 263

[6] INTERACTION BETWEEN TI AND SIO2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2934 - 2938

[7] TING CY, 1982, ELECTROCHEMICAL SOC, P213

[8] WONG CY, UNPUB J APPL PHYS