INTERACTION BETWEEN TI AND SIO2

[1] BORISOV YS, 1978, POROSHK METALL KIEV, V3, P63

[2] CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 771 - 775

[3] Chu W.-K., 1978, BACKSCATTERING SPECT, P89

[4] Krautle H., 1974, APPL ION BEAMS METAL, P193

[5] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[6] SILICIDE AND SCHOTTKY-BARRIER FORMATION IN THE TI-SI AND THE TI-SIOX-SI SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6308 - 6315

[7] ELECTRICAL-PROPERTIES OF AL/TI CONTACT METALLURGY FOR VLSI APPLICATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2590 - 2594

[8] THE USE OF TITANIUM-BASED CONTACT BARRIER LAYERS IN SILICON TECHNOLOGY [J]. THIN SOLID FILMS, 1982, 96 (04) : 327 - 345

[9] TING CY, 1982, ELECTROCHEMICAL SOC, P224

[10] Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359

[1] BORISOV YS, 1978, POROSHK METALL KIEV, V3, P63

[2] CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 771 - 775

[3] Chu W.-K., 1978, BACKSCATTERING SPECT, P89

[4] Krautle H., 1974, APPL ION BEAMS METAL, P193

[5] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714

[6] SILICIDE AND SCHOTTKY-BARRIER FORMATION IN THE TI-SI AND THE TI-SIOX-SI SYSTEMS [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6308 - 6315

[7] ELECTRICAL-PROPERTIES OF AL/TI CONTACT METALLURGY FOR VLSI APPLICATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2590 - 2594

[8] THE USE OF TITANIUM-BASED CONTACT BARRIER LAYERS IN SILICON TECHNOLOGY [J]. THIN SOLID FILMS, 1982, 96 (04) : 327 - 345

[9] TING CY, 1982, ELECTROCHEMICAL SOC, P224

[10] Tu K. N., 1978, Thin films. Interdiffusion and reactions, P359