KINETICS OF GRAIN-GROWTH IN DOPED POLYCRYSTALLINE SILICON THIN-FILMS

被引：6

作者：

KALAINATHAN, S

DHANASEKARAN, R

RAMASAMY, P

机构：

[1] Anna Univ, India

来源：

THIN SOLID FILMS | 1988年 / 163卷

关键词：

D O I：

10.1016/0040-6090(88)90452-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：383 / 386

页数：4

共 11 条

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[9] SURFACE-ENERGY-DRIVEN SECONDARY GRAIN-GROWTH IN ULTRATHIN (LESS-THAN-100 NM) FILMS OF SILICON [J].

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