INELASTIC ELECTRON-TUNNELING SPECTROSCOPY ON MOS STRUCTURES WITH VERY THIN OXIDE-FILMS

被引：13

作者：

BUSMANN, HG ^{[1
]}

EWERT, S ^{[1
]}

SANDER, W ^{[1
]}

SEIBERT, K ^{[1
]}

BALK, P ^{[1
]}

STEFFEN, A ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN, INST HALBLEITERTECH, SONDERFORSCH BEREICH 202, D-5100 AACHEN, FED REP GER

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1985年 / 59卷 / 04期

关键词：

D O I：

10.1007/BF01328855

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：439 / 443

页数：5

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