CHANGES IN INSB AS A RESULT OF ION-IMPLANTATION

被引：18

作者：

SHAANAN, M ^{[1
]}

KALISH, R ^{[1
]}

RICHTER, V ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 7-8卷 / MAR期

关键词：

D O I：

10.1016/0168-583X(85)90596-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：443 / 447

页数：5

共 12 条

[1]

CHERNYSHEVA MY, 1978, PHYS STAT SOLID A, V47, pK5

[2]

DANILOV YA, 1980, SOVIET PHYS SEMICOND, V14

[3] VERY EFFICIENT VOID FORMATION IN ION-IMPLANTED INSB [J].

DESTEFANIS, GL ;

GAILLIARD, JP .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :40-42

[4] MOLECULAR EFFECT IN THE EXPANSION OF ION-IMPLANTED INSB [J].

DESTEFANIS, GL ;

BELLE, JP ;

OGIERCOLLIN, JM ;

GAILLIARD, JP .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :637-639

[5]

GAILLIARD JP, COMMUNICATION

[6] BAND-TO-BAND LUMINESCENCE OF ION-IMPLANTED INP AFTER RAPID LAMP ANNEALING [J].

KIRILLOV, D ;

MERZ, JL ;

KALISH, R ;

RON, A .

APPLIED PHYSICS LETTERS, 1984, 44 (06) :609-610

[7] RADIATION-INDUCED EXPANSION OF SEMICONDUCTORS [J].

KLEITMAN, D ;

YEARIAN, HJ .

PHYSICAL REVIEW, 1957, 108 (03) :901-901

[8]

KOMEM Y, 1977, INTERNAL REPORT MATE

[9]

LANGGUTH G, 1971, ION IMPLANTATION SEM

[10] EFFECT OF STOICHIOMETRIC DISTURBANCES IN AIIIBV COMPOUNDS DURING ION-IMPLANTATION [J].

MAKSIMOV, SK ;

EGOROV, VL ;

KRYUK, VV ;

PISKUNOV, DI ;

PITIRIMOVA, EA ;

VESELOV, VF .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 73 (02) :K283-K285

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