STUDY OF BLACKENING EFFECTS OF INDIUM-TIN OXIDE BY DEPOSITING SPUTTERED TA2O5

被引：12

作者：

CHUBACHI, Y

AOYAMA, K

机构：

[1] Semiconductor Research Laboratory, Clarion Co. Ltd., Koriyama, Fukushima, 963-07, Tamura-machi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 07期

关键词：

TA2O5; REACTIVE SPUTTERING; ITO; ELECTROLUMINESCENCE; BLACKENING OF ITO;

D O I：

10.1143/JJAP.30.1442

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

When Ta2O5 dielectric film was deposited on an indium-tin-oxide (ITO)-coated glass substrate by rf reactive sputtering, the blackening of ITO was observed. It was confirmed that the residual gas during sputtering is related to the blackening of ITO. The presputtering in argon-oxygen mixture gas and the following evacuation to basal pressure (less than 1 x 10(-6) Torr) yield Ta2O5 films without ITO blackening.

引用

页码：1442 / 1446

页数：5

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