DISTRIBUTION PROFILES OF BORON-IMPLANTED LAYERS IN SILICON USING A HIGH-RESOLUTION ANODIC-OXIDATION CELL

被引：4

作者：

ANAND, KV

ELDHAHER, AHG

SOBHY, MI

机构：

[1] UNIV KENT,CANTERBURY CT2 7NJ,KENT,ENGLAND

[2] KUWAIT UNIV,KUWAIT CITY,KUWAIT

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1976年 / 40卷 / 06期

关键词：

D O I：

10.1080/00207217608920605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：617 / 623

页数：7

共 15 条

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ANAND, KV ;

SOBHY, MI ;

ELDHAHER, AHG .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1976, 40 (02) :169-181

[2]

BLAMIRES NG, 1968, PHYS LETT A, VA 28, P178, DOI 10.1016/0375-9601(68)90186-2

[3]

DAVIDSON SM, 1971, ION IMPLANTATION SEM, P79

[4]

Dearnaley G., 1973, ION IMPLANTATION

[5]

ELDHAHER AHG, 1974, THESIS U KENT

[6] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS [J].

GIBBONS, JF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03) :295-+

[7]

Grove A.S., 1991, Physics and Technology of Semiconductor Devices, P388

[8]

HOFKER WK, 1975, PHILIPS RES REP S, V8, P115

[9] DIFFUSION OF BORON INTO SILICON [J].

KURTZ, AD ;

YEE, R .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) :303-305

[10]

Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P1, DOI DOI 10.1002/ADMA.200904153

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