CHEMICAL VAPOR-DEPOSITION OF AL2O3 THIN-FILMS UNDER REDUCED PRESSURES

Al//2O//3 thin films were deposited by reduced-pressure CVD using aluminum tri-isopropoxide as a source. The dependence of the growth rate on the substrate temperature and the source gas supply was determined. The activation energy of the decomposition reactions was determined to be 18 kcal/mol. The electrical resistivity and the dielectric properties are characterized. The origin of the frequency dispersion in the sample prepared under the surface reaction limited conditions are discussed.