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ELECTRICAL-PROPERTIES OF CVD AL2O3-GAAS MIS CAPACITORS
被引:8
作者
:
TANAKA, K
论文数:
0
引用数:
0
h-index:
0
TANAKA, K
TAKAHASHI, H
论文数:
0
引用数:
0
h-index:
0
TAKAHASHI, H
KUNIYOSHI, S
论文数:
0
引用数:
0
h-index:
0
KUNIYOSHI, S
OHKI, H
论文数:
0
引用数:
0
h-index:
0
OHKI, H
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1980年
/ 23卷
/ 10期
关键词
:
D O I
:
10.1016/0038-1101(80)90193-8
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1093 / 1094
页数:2
相关论文
共 8 条
[1]
IMPROVED ENHANCEMENT-DEPLETION GAAS MOSFET USING ANODIC OXIDE AS GATE INSULATOR
COLQUHOUN, A
论文数:
0
引用数:
0
h-index:
0
COLQUHOUN, A
KOHN, E
论文数:
0
引用数:
0
h-index:
0
KOHN, E
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
HARTNAGEL, HL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(03)
: 375
-
376
[2]
HASEGAWA H, 1977, 7TH P INT VAC C 3RD, P549
[3]
GAAS INVERSION-TYPE MIS TRANSISTORS
ITO, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
ITO, T
SAKAI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
SAKAI, Y
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(07)
: 751
-
759
[4]
INTERPRETATION OF ELECTRICAL MEASUREMENTS ON GAAS-MOS SYSTEM
KOHN, E
论文数:
0
引用数:
0
h-index:
0
KOHN, E
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
HARTNAGEL, HL
[J].
SOLID-STATE ELECTRONICS,
1978,
21
(02)
: 409
-
416
[5]
SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
论文数:
0
引用数:
0
h-index:
0
NICOLLIA.EH
GOETZBER.A
论文数:
0
引用数:
0
h-index:
0
GOETZBER.A
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1967,
46
(06):
: 1055
-
+
[6]
ANOMALOUS FREQUENCY DISPERSION OF MOS CAPACITORS FORMED ON N-TYPE GAAS BY ANODIC-OXIDATION
SAWADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
SAWADA, T
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
HASEGAWA, H
[J].
ELECTRONICS LETTERS,
1976,
12
(18)
: 471
-
472
[7]
GAAS-MOS CAPACITOR WITH NATIVE OXIDE FILM ANODIZED IN NON-AQUEOUS ELECTROLYTE
SHIMANO, A
论文数:
0
引用数:
0
h-index:
0
SHIMANO, A
MORITANI, A
论文数:
0
引用数:
0
h-index:
0
MORITANI, A
NAKAI, J
论文数:
0
引用数:
0
h-index:
0
NAKAI, J
[J].
SOLID-STATE ELECTRONICS,
1978,
21
(09)
: 1149
-
1152
[8]
AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
TERMAN, LM
论文数:
0
引用数:
0
h-index:
0
TERMAN, LM
[J].
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
: 285
-
299
←
1
→
共 8 条
[1]
IMPROVED ENHANCEMENT-DEPLETION GAAS MOSFET USING ANODIC OXIDE AS GATE INSULATOR
COLQUHOUN, A
论文数:
0
引用数:
0
h-index:
0
COLQUHOUN, A
KOHN, E
论文数:
0
引用数:
0
h-index:
0
KOHN, E
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
HARTNAGEL, HL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(03)
: 375
-
376
[2]
HASEGAWA H, 1977, 7TH P INT VAC C 3RD, P549
[3]
GAAS INVERSION-TYPE MIS TRANSISTORS
ITO, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
ITO, T
SAKAI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
TOKYO INST TECHNOL, DEPT ELECTR, OHOKAYAMA, MEGURO, TOKYO, JAPAN
SAKAI, Y
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(07)
: 751
-
759
[4]
INTERPRETATION OF ELECTRICAL MEASUREMENTS ON GAAS-MOS SYSTEM
KOHN, E
论文数:
0
引用数:
0
h-index:
0
KOHN, E
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
HARTNAGEL, HL
[J].
SOLID-STATE ELECTRONICS,
1978,
21
(02)
: 409
-
416
[5]
SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
论文数:
0
引用数:
0
h-index:
0
NICOLLIA.EH
GOETZBER.A
论文数:
0
引用数:
0
h-index:
0
GOETZBER.A
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1967,
46
(06):
: 1055
-
+
[6]
ANOMALOUS FREQUENCY DISPERSION OF MOS CAPACITORS FORMED ON N-TYPE GAAS BY ANODIC-OXIDATION
SAWADA, T
论文数:
0
引用数:
0
h-index:
0
机构:
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
SAWADA, T
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO 060,JAPAN
HASEGAWA, H
[J].
ELECTRONICS LETTERS,
1976,
12
(18)
: 471
-
472
[7]
GAAS-MOS CAPACITOR WITH NATIVE OXIDE FILM ANODIZED IN NON-AQUEOUS ELECTROLYTE
SHIMANO, A
论文数:
0
引用数:
0
h-index:
0
SHIMANO, A
MORITANI, A
论文数:
0
引用数:
0
h-index:
0
MORITANI, A
NAKAI, J
论文数:
0
引用数:
0
h-index:
0
NAKAI, J
[J].
SOLID-STATE ELECTRONICS,
1978,
21
(09)
: 1149
-
1152
[8]
AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
TERMAN, LM
论文数:
0
引用数:
0
h-index:
0
TERMAN, LM
[J].
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
: 285
-
299
←
1
→