SUB-100-NM GATE LENGTH GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AND MODULATION-DOPED FIELD-EFFECT TRANSISTORS FABRICATED BY A COMBINATION OF MOLECULAR-BEAM EPITAXY AND ELECTRON-BEAM LITHOGRAPHY

被引：13

作者：

ALLEE, DR

DELAHOUSSAYE, PR

SCHLOM, DG

HARRIS, JS

PEASE, RFW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.583990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：328 / 332

页数：5

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MACKIE, WS
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OXLEY, CH
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) : 471 - 472
[5] SZE SM, 1981, PHYS SEMICONDUCTOR D, P333
[6] PHYSICAL BASIS OF SHORT-CHANNEL MESFET OPERATION
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FREY, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 476 - 490
[7] GRADED CHANNEL FETS - IMPROVED LINEARITY AND NOISE-FIGURE
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SHAW, DW
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