TIME-RESOLVED STUDY OF SILICON SURFACE RECOMBINATION

被引：14

作者：

BOKOR, J ^{[1
]}

HALAS, NJ ^{[1
]}

机构：

[1] AT&T BELL LABS,DYNAM PROPERTIES SEMICOND & MET SURFACES,HOLMDEL,NJ 07733

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 12期

关键词：

25;

D O I：

10.1109/3.40641

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2550 / 2555

页数：6

共 30 条

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