SPECTRAL SHAPE + ATTENUATION LENGTH FOR HOT ELECTRONS IN PRESENCE OF FINITE ABSORPTION

被引：22

作者：

BARAFF, GA

机构：

来源：

PHYSICAL REVIEW A-GENERAL PHYSICS | 1964年 / 135卷 / 2A期

关键词：

D O I：

10.1103/PhysRev.135.A528

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A528 / &

共 16 条

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[2] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON
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MOLL, JL
MEYER, NI
[J]. PHYSICAL REVIEW, 1963, 130 (03): : 972 - +
[3] BARTELINK DJ, 16542 TECH J REP SOL
[4] CASE KM, 1953, INTRODUCTION THEORY, P107
[5] CASE KM, 1953, INTRODUCTION THEORY, P71
[6] CASE KM, 1953, INTRODUCTION THEORY
[7] DAVISON B, 1957, NEUTRON TRANSPORT TH, P53
[8] Davison B, 1957, NEUTRON TRANSPORT TH
[9] GLASSTONE S, 1952, ELEMENTS NUCLEAR REA
[10] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS
MOLL, JL
VANOVERSTRAETEN, R
[J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157