ATOM-PROBE STUDY OF THE INITIAL-STAGE OF SILICIDE FORMATION

被引:12
作者
NISHIKAWA, O
TSUNASHIMA, Y
NOMURA, E
WADA, M
HORIE, S
SHIBATA, M
YOSHIMURA, T
UEMORI, R
机构
关键词
D O I
10.1016/0039-6028(83)90753-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:529 / 533
页数:5
相关论文
共 5 条
[1]   FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE [J].
ANDREWS, JM ;
KOCH, FB .
SOLID-STATE ELECTRONICS, 1971, 14 (10) :901-&
[2]   EPITAXIAL-GROWTH OF THE NICKEL DISILICIDE PHASE [J].
LAU, SS ;
CHEUNG, NW .
THIN SOLID FILMS, 1980, 71 (01) :117-127
[3]   PERFORMANCE OF THE NEW HIGH MASS RESOLUTION TIME OF FLIGHT ATOM PROBE [J].
NISHIKAWA, O ;
KURIHARA, K ;
NACHI, M ;
KONISHI, M ;
WADA, M .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1981, 52 (06) :810-818
[4]   FIELD-ION MICROSCOPE STUDY ON INTERACTION OF GALLIUM WITH METALS .2. ALLOY FORMATION WITH MOLYBDENUM AND ANISOTROPIC BINDING FORCE IN MO3GA [J].
NISHIKAWA, O ;
UTSUMI, T .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :955-964
[5]   REVIEW OF BINARY ALLOY FORMATION BY THIN-FILM INTERACTIONS [J].
OTTAVIANI, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1112-1119