THE GERMANIUM SELENIDE POLYMER BILEVEL PHOTORESIST SYSTEM - A REVIEW

被引:4
作者
HUGGETT, PG [1 ]
LEHMANN, HW [1 ]
机构
[1] LABS RCA LTD,CH-8048 ZURICH,SWITZERLAND
关键词
D O I
10.1007/BF02661219
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:205 / 230
页数:26
相关论文
共 84 条
[61]  
TAI KL, 1981, Patent No. 42109
[62]  
TAI KL, 1982, P S INORGANIC RESIST, P9
[63]  
TAI KL, 1982, JPN J APPL PHYS PT 2, V21, P300
[64]   VISIBLE NEAR-UV OPTICAL-SPECTRA OF A-GEXSE1-X [J].
TRODAHL, HJ ;
VINA, L .
PHYSICAL REVIEW B, 1983, 27 (10) :6498-6501
[65]  
TZINIS CH, 1982, P S INORG RESISTS, P157
[66]   X-RAY PHOTO-ELECTRON SPECTROSCOPY OF AG-DOPED AND CU-DOPED AMORPHOUS AS2SE3 AND GESE2 [J].
UENO, T ;
ODAJIMA, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (02) :230-234
[67]  
VADIMSKY RG, 1980, ECS EXT ABST, V80, P824
[68]  
VADIMSKY RG, 1982, P S INORGANIC RESIST, P37
[69]  
VENKATESAN T, 1982, P SOC PHOTO-OPT INST, V333, P163, DOI 10.1117/12.933429
[70]   THE CHEMICAL-REACTIVITY AND LITHOGRAPHIC SENSITIVITY OF OBLIQUELY DEPOSITED GERMANIUM SELENIDE FILMS USED AS LOW-ENERGY ION-BEAM RESISTS [J].
VENKATESAN, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04) :1368-1373