OPTICAL STUDY OF SELF-ANNEALING IN HIGH-CURRENT ARSENIC-IMPLANTED SILICON

被引：13

作者：

BORGHESI, A ^{[1
]}

CHENJIA, C ^{[1
]}

GUIZZETTI, G ^{[1
]}

NOSENZO, L ^{[1
]}

STELLA, A ^{[1
]}

CAMPISANO, SU ^{[1
]}

RIMINI, E ^{[1
]}

机构：

[1] UNIV CATANIA,DEPARTIMENTO FIS,I-95129 CATANIA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 07期

关键词：

D O I：

10.1063/1.335869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2773 / 2776

页数：4

共 25 条

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[9] OPTICAL REFLECTIVITY OF ION-IMPLANTED AMORPHOUS GAAS [J].

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