学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
CHANGES IN THE OPTICAL REFLECTIVITY OF IMPLANTED SILICON AS A FUNCTION OF IMPLANTATION ENERGY
被引:12
作者
:
AHARONI, H
论文数:
0
引用数:
0
h-index:
0
机构:
RAND AFRIKAANS UNIV,DEPT ELECT & ELECTR ENGN,JOHANNESBURG,SOUTH AFRICA
RAND AFRIKAANS UNIV,DEPT ELECT & ELECTR ENGN,JOHANNESBURG,SOUTH AFRICA
AHARONI, H
[
1
]
SWART, PL
论文数:
0
引用数:
0
h-index:
0
机构:
RAND AFRIKAANS UNIV,DEPT ELECT & ELECTR ENGN,JOHANNESBURG,SOUTH AFRICA
RAND AFRIKAANS UNIV,DEPT ELECT & ELECTR ENGN,JOHANNESBURG,SOUTH AFRICA
SWART, PL
[
1
]
机构
:
[1]
RAND AFRIKAANS UNIV,DEPT ELECT & ELECTR ENGN,JOHANNESBURG,SOUTH AFRICA
来源
:
APPLIED PHYSICS LETTERS
|
1984年
/ 44卷
/ 09期
关键词
:
D O I
:
10.1063/1.94925
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:892 / 894
页数:3
相关论文
共 14 条
[1]
CROWDER BL, 1979, APPL PHYS LETT, V16, P205
[2]
CROWDER BL, 1971, ION IMPLANTATION, P87
[3]
CHANGES OF OPTICAL REFLECTIVITY (1.8-EVTO2.2-EV) INDUCED BY 40-KEV ANTIMONY ION BOMBARDMENT OF SILICON
HART, RR
论文数:
0
引用数:
0
h-index:
0
机构:
Hughes Research Laboratories, Malibu
HART, RR
MARSH, OJ
论文数:
0
引用数:
0
h-index:
0
机构:
Hughes Research Laboratories, Malibu
MARSH, OJ
[J].
APPLIED PHYSICS LETTERS,
1969,
14
(07)
: 225
-
&
[4]
HOVEL HJ, 1975, SOL CELLS, P203
[5]
ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN 1-EV TO 6-EV REGION
KURTIN, S
论文数:
0
引用数:
0
h-index:
0
机构:
Hughes Research Laboratories, Malibu, CA 90265
KURTIN, S
SHIFRIN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
Hughes Research Laboratories, Malibu, CA 90265
SHIFRIN, GA
MCGILL, TC
论文数:
0
引用数:
0
h-index:
0
机构:
Hughes Research Laboratories, Malibu, CA 90265
MCGILL, TC
[J].
APPLIED PHYSICS LETTERS,
1969,
14
(07)
: 223
-
&
[6]
LIU YS, 1979, APPL PHYS LETT, V24, P363
[7]
MCGILL TC, 1970, J APPL PHYS, V14, P246
[8]
OPTICAL REFLECTIVITY STUDIES OF DAMAGE IN ION-IMPLANTED SILICON
MIYAO, M
论文数:
0
引用数:
0
h-index:
0
MIYAO, M
MIYAZAKI, T
论文数:
0
引用数:
0
h-index:
0
MIYAZAKI, T
TOKUYAMA, T
论文数:
0
引用数:
0
h-index:
0
TOKUYAMA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
(05)
: 955
-
956
[9]
CHARACTERIZATION OF (P-31)+-IMPLANTED SI LAYERS BY ELLIPSOMETRY
NAKAMURA, K
论文数:
0
引用数:
0
h-index:
0
机构:
IC Division, Nippon Electric Co., Ltd., Nakahara-ku, Kawasaki, 211
NAKAMURA, K
GOTOH, T
论文数:
0
引用数:
0
h-index:
0
机构:
IC Division, Nippon Electric Co., Ltd., Nakahara-ku, Kawasaki, 211
GOTOH, T
KAMOSHIDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
IC Division, Nippon Electric Co., Ltd., Nakahara-ku, Kawasaki, 211
KAMOSHIDA, M
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(06)
: 3985
-
3989
[10]
DIRECT OBSERVATION OF LASER-INDUCED SOLID-PHASE EPITAXIAL CRYSTALLIZATION BY TIME-RESOLVED OPTICAL REFLECTIVITY
OLSON, GL
论文数:
0
引用数:
0
h-index:
0
OLSON, GL
KOKOROWSKI, SA
论文数:
0
引用数:
0
h-index:
0
KOKOROWSKI, SA
MCFARLANE, RA
论文数:
0
引用数:
0
h-index:
0
MCFARLANE, RA
HESS, LD
论文数:
0
引用数:
0
h-index:
0
HESS, LD
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(11)
: 1019
-
1021
←
1
2
→
共 14 条
[1]
CROWDER BL, 1979, APPL PHYS LETT, V16, P205
[2]
CROWDER BL, 1971, ION IMPLANTATION, P87
[3]
CHANGES OF OPTICAL REFLECTIVITY (1.8-EVTO2.2-EV) INDUCED BY 40-KEV ANTIMONY ION BOMBARDMENT OF SILICON
HART, RR
论文数:
0
引用数:
0
h-index:
0
机构:
Hughes Research Laboratories, Malibu
HART, RR
MARSH, OJ
论文数:
0
引用数:
0
h-index:
0
机构:
Hughes Research Laboratories, Malibu
MARSH, OJ
[J].
APPLIED PHYSICS LETTERS,
1969,
14
(07)
: 225
-
&
[4]
HOVEL HJ, 1975, SOL CELLS, P203
[5]
ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN 1-EV TO 6-EV REGION
KURTIN, S
论文数:
0
引用数:
0
h-index:
0
机构:
Hughes Research Laboratories, Malibu, CA 90265
KURTIN, S
SHIFRIN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
Hughes Research Laboratories, Malibu, CA 90265
SHIFRIN, GA
MCGILL, TC
论文数:
0
引用数:
0
h-index:
0
机构:
Hughes Research Laboratories, Malibu, CA 90265
MCGILL, TC
[J].
APPLIED PHYSICS LETTERS,
1969,
14
(07)
: 223
-
&
[6]
LIU YS, 1979, APPL PHYS LETT, V24, P363
[7]
MCGILL TC, 1970, J APPL PHYS, V14, P246
[8]
OPTICAL REFLECTIVITY STUDIES OF DAMAGE IN ION-IMPLANTED SILICON
MIYAO, M
论文数:
0
引用数:
0
h-index:
0
MIYAO, M
MIYAZAKI, T
论文数:
0
引用数:
0
h-index:
0
MIYAZAKI, T
TOKUYAMA, T
论文数:
0
引用数:
0
h-index:
0
TOKUYAMA, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
(05)
: 955
-
956
[9]
CHARACTERIZATION OF (P-31)+-IMPLANTED SI LAYERS BY ELLIPSOMETRY
NAKAMURA, K
论文数:
0
引用数:
0
h-index:
0
机构:
IC Division, Nippon Electric Co., Ltd., Nakahara-ku, Kawasaki, 211
NAKAMURA, K
GOTOH, T
论文数:
0
引用数:
0
h-index:
0
机构:
IC Division, Nippon Electric Co., Ltd., Nakahara-ku, Kawasaki, 211
GOTOH, T
KAMOSHIDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
IC Division, Nippon Electric Co., Ltd., Nakahara-ku, Kawasaki, 211
KAMOSHIDA, M
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(06)
: 3985
-
3989
[10]
DIRECT OBSERVATION OF LASER-INDUCED SOLID-PHASE EPITAXIAL CRYSTALLIZATION BY TIME-RESOLVED OPTICAL REFLECTIVITY
OLSON, GL
论文数:
0
引用数:
0
h-index:
0
OLSON, GL
KOKOROWSKI, SA
论文数:
0
引用数:
0
h-index:
0
KOKOROWSKI, SA
MCFARLANE, RA
论文数:
0
引用数:
0
h-index:
0
MCFARLANE, RA
HESS, LD
论文数:
0
引用数:
0
h-index:
0
HESS, LD
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(11)
: 1019
-
1021
←
1
2
→