POSITRON-ANNIHILATION STUDIES IN THE FIELD-INDUCED DEPLETION REGIONS OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES

被引：8

作者：

ASOKAKUMAR, P ^{[1
]}

LEUNG, TC ^{[1
]}

LYNN, KG ^{[1
]}

NIELSEN, B ^{[1
]}

FORCIER, MP ^{[1
]}

WEINBERG, ZA ^{[1
]}

RUBLOFF, GW ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 11期

关键词：

D O I：

10.1063/1.350540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The centroid shifts of positron annihilation spectra are reported from the depletion regions of metal-oxide-semiconductor (MOS) capacitors at room temperature and at 35 K. The centroid shift measurement can be explained using the variation of the electric field strength and depletion layer thickness as a function of the applied gate bias. An estimate for the relevant MOS quantities is obtained by fitting the centroid shift versus beam energy data with a steady-state diffusion-annihilation equation and a derivative-gaussian positron implantation profile. Inadequacy of the present analysis scheme is evident from the derived quantities and alternate methods are required for better predictions.

引用

页码：5606 / 5609

页数：4

共 15 条

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