ELECTRON ACCUMULATION IN ALGASB/INAS/ALGASB QUANTUM-WELL SYSTEM

被引：49

作者：

IDESHITA, S

FURUKAWA, A

MOCHIZUKI, Y

MIZUTA, M

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 20期

关键词：

D O I：

10.1063/1.106909

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism of the electron accumulation in the AlGaSb/InAs/AlGaSb QW system with Al composition higher than 0.5 is discussed. In this QW system, it is found that the dominant electron source is donor levels in AlGaSb rather than interface levels which have, so far, been proposed as the electron source. We have found two contradictory results, that undoped AlGaSb shows p-type conduction and Be-doping is compensated electrically, are satisfactorily explained by the model of coexistence of donors and a larger concentration of deep acceptors. Electron accumulation in InAs QW is shown to be controllable by shifting the quantum level with respect to the deep acceptor level.

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页码：2549 / 2551

页数：3

相关论文

共 12 条

[1] ELECTRONIC STATES AND QUANTUM HALL-EFFECT IN GASB-INAS-GASB QUANTUM-WELLS [J].

ALTARELLI, M ;

MAAN, JC ;

CHANG, LL ;

ESAKI, L .

PHYSICAL REVIEW B, 1987, 35 (18) :9867-9870

[2] EXPERIMENTAL-OBSERVATION OF LARGE ROOM-TEMPERATURE CURRENT GAINS IN A STARK-EFFECT TRANSISTOR [J].

COLLINS, DA ;

CHOW, DH ;

MCGILL, TC .

APPLIED PHYSICS LETTERS, 1991, 58 (15) :1673-1675

[3] DETERMINATION OF THE (100) INAS GASB HETEROJUNCTION VALENCE-BAND DISCONTINUITY BY X-RAY PHOTOEMISSION CORE LEVEL SPECTROSCOPY [J].

GUALTIERI, GJ ;

SCHWARTZ, GP ;

NUZZO, RG ;

MALIK, RJ ;

WALKER, JF .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (12) :5337-5341

[4] X-RAY PHOTOEMISSION CORE LEVEL DETERMINATION OF THE GASB/ALSB HETEROJUNCTION VALENCE-BAND DISCONTINUITY [J].

GUALTIERI, GJ ;

SCHWARTZ, GP ;

NUZZO, RG ;

SUNDER, WA .

APPLIED PHYSICS LETTERS, 1986, 49 (16) :1037-1039

[5]

KOPEV PS, 1990, SOV PHYS SEMICOND+, V24, P450

[6] APPLICATION OF SPLIT-GATE AND DUAL-GATE FIELD-EFFECT TRANSISTOR DESIGNS TO INAS FIELD-EFFECT TRANSISTORS [J].

LONGENBACH, KF ;

BERESFORD, R ;

WANG, WI .

SOLID-STATE ELECTRONICS, 1990, 33 (09) :1211-1213

[7] HETEROJUNCTION FIELD-EFFECT TRANSISTORS BASED ON ALGASB/INAS [J].

LUO, LF ;

BERESFORD, R ;

WANG, WI ;

MUNEKATA, H .

APPLIED PHYSICS LETTERS, 1989, 55 (08) :789-791

[8] DENSITIES AND MOBILITIES OF COEXISTING ELECTRONS AND HOLES IN GASB/INAS/GASB QUANTUM-WELLS [J].

MUNEKATA, H ;

MENDEZ, EE ;

IYE, Y ;

ESAKI, L .

SURFACE SCIENCE, 1986, 174 (1-3) :449-453

[9]

TAIRA K, 1990, 22ND P INT C SOL STA, P19

[10] EFFECTS OF INTERFACE LAYER SEQUENCING ON THE TRANSPORT-PROPERTIES OF INAS/ALSB QUANTUM-WELLS - EVIDENCE FOR ANTISITE DONORS AT THE INAS/ALSB INTERFACE [J].

TUTTLE, G ;

KROEMER, H ;

ENGLISH, JH .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (06) :3032-3037