DAMAGE STUDY AND PHYSICAL-PROPERTIES OF ION-IMPLANTED CD0.7HG0.3TE PROCESSED BY FURNACE AND RAPID THERMAL ANNEALING

被引：9

作者：

UZAN, C ^{[1
]}

MARFAING, Y ^{[1
]}

LEGROS, R ^{[1
]}

KALISH, R ^{[1
]}

RICHTER, V ^{[1
]}

机构：

[1] CNRS,PHYS SOLIDES LAB,F-92195 MEUDON,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90801-Q

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：744 / 748

页数：5

共 14 条

[1] AN HG0.3CD0.7TE AVALANCHE PHOTODIODE FOR OPTICAL-FIBER TRANSMISSION-SYSTEMS AT LAMBDA= 1.3-MU-M [J].

ALABEDRA, R ;

ORSAL, B ;

LECOY, G ;

PICHARD, G ;

MESLAGE, J ;

FRAGNON, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) :1302-1306

[2] ELECTRICAL-PROPERTIES OF DONOR AND ACCEPTOR IMPLANTED HG1-XCDXTE FOLLOWING CW CO2-LASER ANNEALING [J].

BAHIR, G ;

KALISH, R ;

NEMIROVSKY, Y .

APPLIED PHYSICS LETTERS, 1982, 41 (11) :1057-1059

[3] STRUCTURE OF ION-IMPLANTED AND ANNEALED HG1-XCDXTE [J].

BAHIR, G ;

KALISH, R .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3129-3140

[4] BORON AND INDIUM ION-IMPLANTED JUNCTIONS IN HGCDTE GROWN ON CDTE AND CDTE/AL2O3 [J].

BUBULAC, LO ;

LO, DS ;

TENNANT, WE ;

EDWALL, DD ;

ROBINSON, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04) :2169-2173

[5] BEHAVIOR OF IMPLANTATION-INDUCED DEFECTS IN HGCDTE [J].

BUBULAC, LO ;

TENNANT, WE ;

RIEDEL, RA ;

MAGEE, TJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :251-254

[6] THERMAL PULSE ANNEALING OF BORON-IMPLANTED HGCDTE [J].

CONWAY, KL ;

OPYD, WG ;

GREINER, ME ;

GIBBONS, JF ;

SIGMON, TW ;

BUBULAC, LO .

APPLIED PHYSICS LETTERS, 1982, 41 (08) :750-752

[7] INDIUM ION-IMPLANTATION IN HG0.78CD0.22TE/CDTE [J].

DESTEFANIS, GL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :171-175

[8] ION-IMPLANTATION IN HG1-XCDXTE [J].

DESTEFANIS, GL .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :567-580

[9] NATIVE OXIDE ENCAPSULATION FOR ANNEALING BORON-IMPLANTED HG1-XCDXTE [J].

KAO, TM ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1986, 49 (08) :464-466

[10] PHOTOLUMINESCENCE OF CD-RICH HG1-XCDXTE ALLOYS (0.7 LESS-THAN X LESS-THAN 1) [J].

LEGROS, R ;

TRIBOULET, R .

JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :264-269

← 1 2 →