SCHEME OF ELECTRONIC-TRANSITIONS VIA 0.94, 1.0, 1.2, AND 1.3 EV RADIATIVE CENTERS IN N-GAAS

被引：20

作者：

GLINCHUK, KD ^{[1
]}

PROKHOROVICH, AV ^{[1
]}

RODIONOV, VE ^{[1
]}

VOVNENKO, VI ^{[1
]}

机构：

[1] ACAD SCI UKSSR,INST SEMICOND,KIEV,UKSSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 41卷 / 02期

关键词：

D O I：

10.1002/pssa.2210410240

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：659 / 668

页数：10

共 16 条

[11]

VANDERDOESDEBYE JA, 1967, J PHYS CHEM SOLIDS, V28, P1485

VOROBKAL.FM ;

GLINCHUK, KD ;

PROKHORO.AV ;

JOHN, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 15 (01) :287-293

[13]

Vorobkalo F. M., 1970, Physica Status Solidi A, V1, pk109, DOI 10.1002/pssa.19700010330

[14] CHARACTERISTICS OF 0.93 TO 1.0 EV LUMINESCENCE BANDS IN GAAS [J].

VOROBKALO, FM ;

GLINCHUK, KD ;

PROKHOROVICH, AV .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 7 (01) :135-+

[15]

Williams E.W., 1992, SEMICONDUCTOR SEMIME, V8, P321

WILLIAMS, EW .

PHYSICAL REVIEW, 1968, 168 (03) :922-&