OXYGEN DOPING IN CDTE, CDS AND ZNS

被引：24

作者：

AKIMOTO, K

OKUYAMA, H

IKEDA, M

MORI, Y

机构：

[1] Sony Corporation Research Center, Yokohama, 240, Fujitsuka 174, Hodogaya

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90787-J

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Properties of isoelectronic oxygen in II-VI semiconductors were studied by photoluminescence (PL) measurements. A donor-to-acceptor peak, which was confirmed by measurements of the peak shifts with excitation density, was observed in the PL spectra from oxygen-doped CdTe, CdS, and ZnS. It was found that oxygen can act as an acceptor in CdTe, CdS, and ZnS as well as in ZnSe. It was reconfirmed that oxygen in ZnTe acts as an isoelectronic trap. Charge transfer from host lattice to oxygen atom may play an important role in oxygen acting as an acceptor. From the charge-transfer model, it can be qualitatively interpreted that there are two roles for oxygen in II-VI compounds, as an acceptor or as a trap, and these roles are classified by ionicity of the compounds.

引用

页码：420 / 423

页数：4

共 10 条

[1] ELECTROLUMINESCENCE IN AN OXYGEN-DOPED ZNSE P-N-JUNCTION GROWN BY MOLECULAR-BEAM EPITAXY [J].