COMPOSITION-RATIO DEPENDENCE OF FORMATION OF BOUND-STATES IN NITROGEN-IMPLANTED ALXGA1-XAS

被引：24

作者：

MAKITA, Y ^{[1
]}

LJUIN, H ^{[1
]}

GONDA, S ^{[1
]}

机构：

[1] ELECTROTECH LAB,TANASHI,TOKYO,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 05期

关键词：

D O I：

10.1063/1.88738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：287 / 289

页数：3

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