共 21 条
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STOICHIOMETRY EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION AND TRANSPORT STUDIES OF TI1+XS2
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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1983, 16 (02)
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REFLECTIVITY, JOINT DENSITY OF STATES AND BAND-STRUCTURE OF GROUP IVB TRANSITION-METAL DICHALCOGENIDES
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JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1985, 18 (17)
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[3]
LATTICE-DYNAMICS OF LAYERED TRANSITION-METAL DIHALIDES
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PHYSICAL REVIEW B,
1980, 21 (06)
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[4]
ANGLE-RESOLVED PHOTOEMISSION-STUDIES OF THE BAND-STRUCTURE OF TISE2 AND TIS2
[J].
PHYSICAL REVIEW B,
1980, 21 (02)
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[5]
SEMIMETALLIC CHARACTER OF TISE2 AND SEMICONDUCTOR CHARACTER OF TIS2 UNDER PRESSURE
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1977, 10 (24)
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[6]
HIGH-PRESSURE TRANSPORT-PROPERTIES OF TIS2 AND TISE2
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1982, 15 (10)
:2183-2192
[7]
HARBEC JY, 1983, PHYS REV B, V28, P7003
[8]
NEW MECHANISM FOR THE ELECTRICAL-RESISTIVITY OF LAYER COMPOUNDS - TIS2
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1981, 14 (26)
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[9]
SEMICONDUCTOR TO SEMIMETAL TRANSITION IN TIS2 AT 40 KBAR
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1984, 17 (15)
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[10]
STOICHIOMETRY DEPENDENCE OF THE TRANSPORT-PROPERTIES OF TIS2
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1981, 14 (28)
:4067-4081