CARRIER LIFETIME MEASUREMENT BY RAMP RECOVERY OF P-I-N-DIODES

被引：10

作者：

GAMAL, SH

MOREL, H

CHANTE, JP

机构：

[1] Laboratoire de Composants de Puissance et Application, INSA de Lyon

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 08期

关键词：

D O I：

10.1109/16.57146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

A new method for measuring carrier lifetime in the base of power p-i-n diodes is introduced. The method is based on ramp recovery of power diodes. Neither the charge left at the end of the first phase of the recovery process nor the base width is needed to determine the lifetime. Moreover, information about the base width of relatively short-base diodes can be obtained. © 1990 IEEE

引用

页码：1921 / 1924

页数：4

共 9 条

[1]

ELECTRON AND HOLE MOBILITIES IN SILICON AS A FUNCTION OF CONCENTRATION AND TEMPERATURE [J].