PLASMA FILAMENT ION-SOURCE

被引：11

作者：

YABE, E ^{[1
]}

TONEGAWA, A ^{[1
]}

SATOH, D ^{[1
]}

TAKAYAMA, K ^{[1
]}

FUKUI, R ^{[1
]}

TAKAGI, K ^{[1
]}

OKAMOTO, K ^{[1
]}

KOMIYA, S ^{[1
]}

机构：

[1] ULVAC CORP,DIV RES & DEV,CHIGASAKI,KANAGAWA 253,JAPAN

来源：

VACUUM | 1986年 / 36卷 / 1-3期

关键词：

D O I：

10.1016/0042-207X(86)90267-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：43 / 45

页数：3

共 13 条

[1]

DAS K, 1981, I PHYS C SER, V60, P307

[2]

FREEMAN JH, 1960, NUCL INSTRUM METH, V22, P306

[3] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

IZUMI, K ;

DOKEN, M ;

ARIYOSHI, H .

ELECTRONICS LETTERS, 1978, 14 (18) :593-594

[4] CHARACTERISTICS OF MOSFETS FABRICATED IN SILICON-ON-INSULATOR MATERIAL FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION [J].

LAM, HW ;

PINIZZOTTO, RF ;

YUAN, HT ;

BELLAVANCE, DW .

ELECTRONICS LETTERS, 1981, 17 (10) :356-358

[5] A NEW WAY OF PRODUCING ION BEAMS FROM METALS AND GASES USING PLASMA JET FROM A DUOPLASMATRON [J].

MASIC, R ;

SAUTTER, JM ;

WARNECKE, RJ .

NUCLEAR INSTRUMENTS & METHODS, 1969, 71 (03) :339-&

[6]

OTSUKA M, 1966, 7TH P INT C PHEN ION, V1, P420

[7]

TAKAYAMA K, 1960, KAKUYUGO KENKYU, V14, P98

[8]

WILSON SR, 1982, ELECTRONIC MATERIALS

[9] AN ION-SOURCE WITH PLASMA GENERATOR [J].

YABE, E ;

TAKESHIRO, S ;

SUNAKO, K ;

TAKAYAMA, K ;

FUKUI, R ;

TAKAGI, K ;

OKAMOTO, K ;

KOMIYA, S .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) :119-122

[10]

YABE E, 1983, P INT ION ENG C ISIA, V1, P403

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