NOISE MEASUREMENTS IN CHARGE-COUPLED-DEVICES

被引：23

作者：

MOHSEN, AM ^{[1
]}

TOMPSETT, MF ^{[1
]}

SEQUIN, CH ^{[1
]}

机构：

[1] BELL TEL LABS INC,UNIPOLAR DESIGN LAB,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / ED22卷 / 05期

关键词：

D O I：

10.1109/T-ED.1975.18110

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：209 / 218

页数：10

相关论文

共 23 条

[11] INFLUENCE OF INTERFACE STATES ON INCOMPLETE CHARGE-TRANSFER IN OVERLAPPING GATE CHARGE-COUPLED DEVICES
MOHSEN, AM
MCGILL, TC
DAIMON, Y
MEAD, CA
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (02) : 125 - 138
[12] MOHSEN AM, TO BE PUBLISHED
[13] LINEARITY OF ELECTRICAL CHARGE INJECTION INTO CHARGE-COUPLED-DEVICES
SEQUIN, CH
MOHSEN, AM
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (02) : 81 - 92
[14] NOISE SUPPRESSION IN CHARGE-TRANSFER DEVICES
THORNBER, KK
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1113 - &
[15] ERROR RATES OF DIGITAL SIGNALS IN CHARGE-TRANSFER DEVICES
THORNBER, KK
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1973, 52 (10): : 1795 - 1809
[16] SPECTRAL DENSITY OF NOISE GENERATED IN CHARGE-TRANSFER DEVICES
THORNBER, KK
TOMPSETT, MF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) : 456 - 456
[17] THORNBER KK, 1974, BELL SYST TECH J, V53
[18] QUANTITATIVE EFFECTS OF INTERFACE STATES ON PERFORMANCE OF CHARGE-COUPLED DEVICES
TOMPSETT, MF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (01) : 45 - 55
[19] USE OF CHARGE-COUPLED DEVICES FOR DELAYING ANALOG SIGNALS
TOMPSETT, MF
ZIMANY, EJ
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (02) : 151 - 157
[20] TOMPSETT MF, TO BE PUBLISHED