GROWTH AND CHARACTERIZATION OF ZNSE GROWN ON GAAS BY HOT-WALL EPITAXY

被引：18

作者：

HINGERL, K ^{[1
]}

SITTER, H ^{[1
]}

AS, DJ ^{[1
]}

ROTHEMUND, W ^{[1
]}

机构：

[1] INST ANGEW FESTKORPERPHYS,W-7800 FREIBURG,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90961-J

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnSe was grown successfully on (100)GaAs by hot-wall epitaxy. The crystal quality and orientation of the ZnSe layers were studied by X-ray diffraction and cathodoluminescence at room temperature and 17 K. For the first time (111)ZnSe layers on (100)GaAs have been grown. The influence of the preheating procedure of the GaAs substrate, the substrate temperature and of the Zn-to-Se vapour ratio was investigated. At low substrate temperatures and at a high Se portion in the gas phase, (111)-oriented growth of ZnSe was observed. The (100)-oriented ZnSe layers show very good cathodoluminescence properties at 17 K and at room temperature. © 1989.

引用

页码：180 / 184

页数：5