AN ANALYTICAL ONE-DIMENSIONAL MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES

[1] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[2] SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 254 - 262

[3] Hu C., 1983, International Electron Devices Meeting 1983. Technical Digest, P176

[4] LAI FS, UNPUB SOLID STATE EL

[5] LAI FS, UNPUB DESIGN CHARACT

[6] LAI FS, 1984, 166TH EL SOC M NEW O

[7] MULLER RS, 1977, DEVICE ELECTRONICS I

[8] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1359 - 1367

[9] A TRANSMISSION-LINE MODEL FOR SILICIDED DIFFUSIONS - IMPACT ON THE PERFORMANCE OF VLSI CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 651 - 661

[10] SZE SM, 1981, PHYSICS SEMICONDUCTO

[1] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[2] SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 254 - 262

[3] Hu C., 1983, International Electron Devices Meeting 1983. Technical Digest, P176

[4] LAI FS, UNPUB SOLID STATE EL

[5] LAI FS, UNPUB DESIGN CHARACT

[6] LAI FS, 1984, 166TH EL SOC M NEW O

[7] MULLER RS, 1977, DEVICE ELECTRONICS I

[8] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1359 - 1367

[9] A TRANSMISSION-LINE MODEL FOR SILICIDED DIFFUSIONS - IMPACT ON THE PERFORMANCE OF VLSI CIRCUITS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 651 - 661

[10] SZE SM, 1981, PHYSICS SEMICONDUCTO