10 GBIT/S MQW-DFB-SIBH LASERS ENTIRELY GROWN BY LPMOVPE

被引:16
作者
SPEIER, P
BOUAYADAMINE, J
CEBULLA, U
DUTTING, K
KLENK, M
LAUBE, G
MAYER, HP
WEINMANN, R
WUNSTEL, K
ZIELINSKI, E
HILDEBRAND, O
机构
[1] SEL-ALCATEL Research Center, Optoelectronics Division, Stuttgart, Lorenzstr, 10
关键词
SEMICONDUCTOR LASERS; LASERS;
D O I
10.1049/el:19910540
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The successful realisation of MQW DFB-SIBH lasers for 10 Gbit/s systems applications is reported. The SIBH laser structure is completely based on an LPMOVPE growth process, including selective LPMOVPE of semi-insulating current blocking layers. Threshold currents as low as 7 mA and total chip capacitances of 2.6 pF are measured resulting in 6 dB(el) (dB(el) = electrical dB) corner frequencies in excess of 11 GHz and rise/fall times of 36/44 ps, respectively. A significant reduction of the linewidth broadening compared to bulk lasers is observed which is attributed to a reduced alpha factor due to quantum wells. A chirp at -20 dB of 0.47 nm under 10 Gbit/s modulation is obtained.
引用
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页码:863 / 864
页数:2
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