ZINC-STIMULATED OUTDIFFUSION OF IRON IN INP

被引：48

作者：

YOUNG, EWA

FONTIJN, GM

机构：

[1] Philips Components, Philips Research Laboratories Eindhoven, 5600 JA Eindhoven

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 02期

关键词：

D O I：

10.1063/1.103058

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resistivity InP (108 Ω cm) can be grown by means of metal organic vapor phase epitaxy using ferrocene as a dopant source. Adjacent zinc-doped layers of InP annihilate the resistivity of the (intentionally) iron-doped InP. The presence of Zn dramatically enhances outdiffusion of iron out off intentionally iron-doped layers of InP into the Zn-doped InP. Diffusion of Zn into the iron-doped InP is also observed.

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页码：146 / 147

页数：2

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