EFFECTS OF OXIDATION AND HYDROGEN ANNEALING ON SILICON-SAPPHIRE-INTERFACE REGION OF SOS

被引：8

作者：

GOODMAN, AM ^{[1
]}

WEITZEL, CE ^{[1
]}

机构：

[1] RCA CORP LABS,PRINCETON,NJ 08540

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 03期

关键词：

D O I：

10.1109/T-ED.1977.18711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：215 / 218

页数：4

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