QUANTUM EFFECTS IN ACCUMULATION LAYERS OF SI-SIO2 INTERFACES IN THE WKB EFFECTIVE MASS APPROXIMATION

被引：9

作者：

DECASTRO, E

OLIVO, P

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1985年 / 132卷 / 01期

关键词：

D O I：

10.1002/pssb.2221320116

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：153 / 163

页数：11

共 13 条

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