A CAD-ORIENTED NON-QUASI-STATIC APPROACH FOR THE TRANSIENT ANALYSIS OF MOS ICS

被引：49

作者：

TURCHETTI, C

MANCINI, P

MASETTI, G

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1986年 / 21卷 / 05期

关键词：

D O I：

10.1109/JSSC.1986.1052614

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：827 / 836

页数：10

共 24 条

[1] A SMALL-SIGNAL DC-TO-HIGH-FREQUENCY NONQUASISTATIC MODEL FOR THE 4-TERMINAL MOSFET VALID IN ALL REGIONS OF OPERATION [J].

BAGHERI, M ;

TSIVIDIS, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2383-2391

[2] AN 8-CHANNEL 8 BIT MICROPROCESSOR COMPATIBLE NMOS D-A CONVERTER WITH PROGRAMMABLE SCALING [J].

BIENSTMAN, LA ;

DEMAN, HJ .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (06) :1051-1059

[3]

BURNS JR, 1969, RCA REV, V15, P15

[4]

Finlayson B. A., 1972, METHOD WEIGHTED RESI

[5] PERIPHERAL CIRCUITS FOR ONE TRANSISTOR CELL MOS RAMS [J].

FOSS, RC ;

HARLAND, R .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (05) :255-261

[6] SMALL-SIGNAL HIGH-FREQUENCY EQUIVALENT CIRCUIT FOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].

HASLETT, JW ;

TROFIMENKOFF, FN .

PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1969, 116 (05) :699-+

[7]

KLASSEN FM, 1976, PHILIPS RES REP, V3, P71

[8]

KUO JB, 1986, FEB INT SOL STAT CIR, P158

[9] TECHNIQUES FOR SMALL-SIGNAL ANALYSIS OF SEMICONDUCTOR-DEVICES [J].

LAUX, SE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) :2028-2037

[10] SMALL-SIGNAL MOSFET MODELS FOR ANALOG CIRCUIT-DESIGN [J].

LIU, S ;

NAGEL, LW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (06) :983-998

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