ELECTRONIC-PROPERTIES OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON

被引：3

作者：

OUALID, J ^{[1
]}

AMZIL, H ^{[1
]}

CREST, JP ^{[1
]}

DUGAS, J ^{[1
]}

MATHIAN, G ^{[1
]}

ZEHAF, M ^{[1
]}

MARTINUZZI, S ^{[1
]}

机构：

[1] CTR UNIV ST JEROME,ECOLE NATL SUPER PHYS MARSEILLE,MAT & COMPOSANTS SEMICOND LAB,F-13397 MARSEILLE 13,FRANCE

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC1期

关键词：

D O I：

10.1051/jphyscol:1982142

中图分类号：

学科分类号：

摘要：

引用

页码：313 / 318

页数：6

共 14 条

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[3]

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[6] THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS [J].

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LINDHOLM, FA .

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[8] INFLUENCE OF PHOSPHORUS-INDUCED POINT-DEFECTS ON A GOLD-GETTERING MECHANISM IN SILICON [J].

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PAUGAM, J ;

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PELOUS, G .

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[9]

LIOTARD JL, 1982, THESIS MARSEILLE

[10]

MATARE HF, 1971, DEFECT ELECTRONICS S

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